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Package Marking and Ordering Information
Part Number
FDP075N15A_F102
FDB075N15A
Top Mark
FDP075N15A
FDB075N15A
Package
TO-220
D 2 -PAK
Packing Method
Tube
Tape and Reel
Reel Size
N/A
330 mm
Tape Width
N/A
24 mm
Quantity
50 units
800 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V
150
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 120 V, V GS = 0 V
V DS = 120 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
25 o C
-
-
-
-
0.1
-
-
-
-
1
500
±100
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 100 A
V DS = 10 V, I D = 100 A
2.0
-
-
-
6.25
164
4.0
7.5
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss(er)
Q g(tot)
Q gs
Q gs2
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
V DS = 75 V, V GS = 0 V,
f = 1 MHz
V DS = 75 V, V GS = 0 V
V DS = 75 V, I D = 100 A,
V GS = 10 V
f = 1 MHz
(Note 4)
-
-
-
-
-
-
-
-
-
5525
516
21
909
77
26
11
16
2.29
7350
685
-
-
100
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 75 V, I D = 100 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
28
37
62
21
66
84
134
52
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
130*
520
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 100 A
V GS = 0 V, V DD = 75 V, I SD = 100 A,
dI F /dt = 100 A/ μ s
-
-
-
-
97
264
1.25
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting T J = 25 ° C, L = 3 mH, I AS = 19.8 A.
3. I SD ≤ 100 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
2
www.fairchildsemi.com
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